On the diffusion current in a MOSFET operated down to deep cryogenic temperatures
نویسندگان
چکیده
A detailed and didactic analysis of the diffusivity in a 2D inversion layer is carried out, providing its dependence on carrier density temperature. Then, comprehensive study diffusion drift current components MOSFET proposed. Their with gate drain voltages investigated down to deep cryogenic temperature, revealing that at T = 4 K nearly constant strong whatever mobility law. Finally, based our analysis, new formulation noise valid from weak very low temperature has been developed.
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این تحقیق به منظور بررسی رابطه بین میزان استراتژیهای خود-تنظیم شده یادگیری و تمایل به ایجاد ارتباط دانشجویان زبان انگلیسی انجام شده است.علاوه بر این،روابط و کنش های موجود بین ریزسنجه های استراتژیهای خود-تنظیم شده یادگُیری ، مهارت نگارش و تمایل به برقراری ارتباط و همچنین تاٍثیرجنسیت دانشجویان زبان انگلیسی در استراتژیهای خود-تنظیم شده یادگیری و تمایل به برقراری ارتباط آنها مورد بررسی قرار گرفته شد.
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ژورنال
عنوان ژورنال: Solid-state Electronics
سال: 2021
ISSN: ['0038-1101', '1879-2405']
DOI: https://doi.org/10.1016/j.sse.2020.107949